for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 1 amplifiers - l ine a r & p ower - sm t HMC863LP4E v01.1110 general description features functional diagram the h m c863 lp 4 e is a three stage gaas ph em t mmi c ? w att p ower amplifer which operates be - tween 22 and 26.5 ghz. the h m c863 lp 4 e provides 21.5 db of gain, +27.5 dbm of saturated output pow - er and 15% p a e from a +6v supply. high output ip 3 makes the h m c863 lp 4 e ideal for point-to-point and point-to-multi-point radio systems as well as v s at ap - plications. the rf i / o s are dc blocked and matched to 50 o hms for ease of integration into higher level assemblies. the h m c863 lp 4 e can also be operated from a 5v supply with only a slight decrease in output power & ip 3. s aturated o utput p ower: up to +27.5 dbm @ 15% p a e high o utput ip 3: +33 dbm high gain: 21.5 db dc s upply: +6v @ 350ma n o e xternal m atching r equired 24 l ead 4x4 mm sm t p ackage: 16 mm2 electrical specifcations, t a = +25 c, vdd = vdd1 = vdd2 = +6v, idd = 350ma [1] typical applications the h m c863 lp 4 e is ideal for: ? p oint-to- p oint r adios ? p oint-to- m ulti- p oint r adios ? v s at ? m ilitary & s pace p arameter m in. typ. m ax. units f requency r ange 22 - 26.5 ghz gain 19 21.5 db gain variation o ver temperature 0.032 db/ c i nput r eturn l oss 11 db o utput r eturn l oss 15 db o utput p ower for 1 db compression ( p 1db) 22 24.5 dbm s aturated o utput p ower ( p sat) 27 dbm o utput third o rder i ntercept ( ip 3) [2] 33 dbm total s upply current ( i dd) 350 380 ma [1] adjust vgg between -2 to 0v to achieve i dd = 350ma typical. [2] m easurement taken at +6v @ 350ma, p out / tone = +14 dbm gaas phemt mmic ? watt power amplifier, 22 - 26.5 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 2 input return loss vs. temperature output return loss vs. temperature broadband gain & return loss vs. frequency gain vs. temperature p1db vs. temperature p1db vs. supply voltage HMC863LP4E v01.1110 gaas phemt mmic ? watt power amplifier, 22 - 26.5 ghz -40 -30 -20 -10 0 10 20 30 20 21 22 23 24 25 26 27 28 29 s21 s11 s22 frequency (ghz) response (db) -25 -20 -15 -10 -5 0 22 23 24 25 26 27 +25c +85c -40c frequency (ghz) return loss (db) 12 14 16 18 20 22 24 26 28 22 23 24 25 26 27 +25c +85c -40c frequency (ghz) gain (db) -40 -35 -30 -25 -20 -15 -10 -5 0 22 23 24 25 26 27 +25c +85c -40c frequency (ghz) return loss (db) 20 22 24 26 28 22 23 24 25 26 27 +25c +85c -40c frequency (ghz) p1db (dbm) 20 22 24 26 28 22 23 24 25 26 27 6.0v 5.5v 5.0v frequency (ghz) p1db (dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 3 amplifiers - l ine a r & p ower - sm t output ip3 vs. supply current, pout/tone = +14 dbm output ip3 vs. temperature, pout/tone = +14 dbm psat vs. supply current (idd) p1db vs. supply current (idd) HMC863LP4E v01.1110 gaas phemt mmic ? watt power amplifier, 22 - 26.5 ghz 20 22 24 26 28 22 23 24 25 26 27 300ma 350ma 400ma frequency (ghz) p1db (dbm) 22 24 26 28 30 22 23 24 25 26 27 300ma 350ma 400ma frequency (ghz) psat (dbm) 28 30 32 34 36 38 22 23 24 25 26 27 +25c +85c -40c frequency (ghz) ip3 (dbm) 28 30 32 34 36 38 22 23 24 25 26 27 300ma 350ma 400ma frequency (ghz) ip3 (dbm) psat vs. temperature psat vs. supply voltage 23 25 27 29 31 33 22 23 24 25 26 27 +25c +85c -40c frequency (ghz) psat (dbm) 22 24 26 28 30 22 23 24 25 26 27 6.0v 5.5v 5.0v frequency (ghz) psat (dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 4 HMC863LP4E v01.1110 gaas phemt mmic ? watt power amplifier, 22 - 26.5 ghz power compression @ 25 ghz reverse isolation vs. temperature output ip3 vs. supply voltage, pout/tone = +14 dbm output im3 @ vdd = +5.5v output im3 @ vdd = +6v output im3 @ vdd = +5v 28 30 32 34 36 38 22 23 24 25 26 27 6.0v 5.5v 5.0v frequency (ghz) ip3 (dbm) 0 10 20 30 40 50 60 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 23 ghz 24 ghz 25 ghz 26 ghz 27 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 23 ghz 24 ghz 25 ghz 26 ghz 27 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 23 ghz 24 ghz 25 ghz 26 ghz 27 ghz pout/tone (dbm) im3 (dbc) 0 5 10 15 20 25 30 35 -15 -12 -9 -6 -3 0 3 6 9 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) -90 -80 -70 -60 -50 -40 -30 -20 -10 0 22 23 24 25 26 27 +25c +85c -40c frequency (ghz) reverse isolation (db)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 5 amplifiers - l ine a r & p ower - sm t HMC863LP4E v01.1110 gaas phemt mmic ? watt power amplifier, 22 - 26.5 ghz absolute maximum ratings drain bias voltage (vd) 6.3v rf i nput p ower ( rfin ) +26 dbm channel temperature 150 c continuous p diss (t= 85 c) (derate 37 m w /c above 85 c) 2.52 w thermal r esistance (channel to ground paddle) 26.9 c/ w s torage temperature -65 to +150 c o perating temperature -55 to +85 c es d s ensitivity (hb m ) class 0, 150v vdd (v) idd (ma) +5.0 350 +5.5 350 +6.0 350 note: amplifer will operate over full voltage ranges shown above vgg adjusted to achieve idd = 350ma at +5.5v typical supply current vs. vdd ele ct ros tat ic sensi t i v e de v ic e o b ser v e ha n d lin g pre caut ions power dissipation gain & power vs. supply voltage @ 25 ghz gain & power vs. supply current @ 25 ghz 18 20 22 24 26 28 30 32 300 320 340 360 380 400 gain p1db psat idd (ma) gain (db), p1db (dbm), psat (dbm) 18 20 22 24 26 28 30 32 5 5.2 5.4 5.6 5.8 6 gain p1db psat vdd (v) gain (db), p1db (dbm), psat (dbm) 1 1.5 2 2.5 3 3.5 4 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 23 ghz 24 ghz 25 ghz 26 ghz 27 ghz input power (dbm) power dissipation (w)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 6 HMC863LP4E v01.1110 gaas phemt mmic ? watt power amplifier, 22 - 26.5 ghz outline drawing no tes: 1. p ackag e b o dy m at eri a l : a lu min a 2. le ad a n d g ro u n d p add le pl at in g: 30-80 mi c roin ch es g ol d o v er 50 mi c roin ch es minim u m ni ck el . 3. d imensions a re in in ch es [ millime t ers ]. 4. le ad sp ac in g t oler a n c e is non -cu m u l at i v e 5. p ackag e w a rp s ha ll not e xc ee d 0.05mm datu m -c- 6. a ll g ro u n d le ad s a n d g ro u n d p add le m u s t b e sol d ere d to p cb rf g ro u n d. 7. c l a ssifie d a s mois tu re sensi t i v i ty le v el ( msl ) 1. p art n umber p ackage body m aterial l ead f inish msl r ating p ackage m arking [1] h m c863 lp 4 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] h863 xxxx [1] 4-digit lot number xxxx [2] m ax peak refow temperature of 260 c package information p in n umber f unction description i nterface s chematic 1, 2, 4 - 7, 12 - 15, 17 - 19, 24 p ackage bottom g n d ground pins and package bottom must be connected to rf /dc ground. 3 rfin this pin is ac coupled and matched to 50 o hms. 8 - 11 n /c the pins are not connected internally; however, all data shown herein was measured with these pins connected to rf /dc ground externally. 16 rfo ut this pin is ac coupled and matched to 50 o hms. 20 vd drain bias for amplifer. e xternal 100 p f , 0.1 f and 4.7 f bypass capacitors are required. 23 vg gate control for p a. adjust vg to achieve recommended bias current. e xternal 100 p f , 0.1 f and 4.7 f bypass capacitors are required. pin descriptions
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 7 amplifiers - l ine a r & p ower - sm t HMC863LP4E v01.1110 gaas phemt mmic ? watt power amplifier, 22 - 26.5 ghz evaluation pcb list of materials for evaluation pcb 130560 [1] i tem description j1 - j2 2.9 mm connectors j3 - j4 dc p ins c1, c2 100 p f capacitors, 0402 p kg. c6 10 kp f capacitor, 0402 p kg c10 4.7 f capacitor, 0402 p kg. u1 h m c863 lp 4 e p ower amplifer p cb [2] 125559 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 or arlon fr 4 the circuit board used in the application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be con - nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 8 HMC863LP4E v01.1110 gaas phemt mmic ? watt power amplifier, 22 - 26.5 ghz application circuit
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